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Cas No. 175923-04-3 Tetrakis(ethylmethylamino)zirconium(IV)

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Chemical Name: Tetrakis(ethylmethylamino)zirconium(IV)
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175923-04-3
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Molecular Type: C12H32N4Zr
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Zirconium based amino metal compounds are mainly used as precursors for the growth of ZrO2 in CVD, ALD, and plasma enhanced atomic layer deposition (PEALD) processes. ZrO2 replaces silicon dioxide in the preparation of 45nm transistors, which can significantly reduce leakage power. It is a high-k insulation material for COMS and DRAM, and is currently one of the most preferred materials to solve the challenges of dynamic storage (DRAM) and high-definition display technology.

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